SbOsSe is an antimony-osmium-selenium compound belonging to the chalcogenide semiconductor family, combining rare transition metals with a chalcogen to create a material with potential for specialized electronic and photonic applications. This is primarily a research-phase material explored for its unique electronic band structure and potential optoelectronic properties; it is not yet widely deployed in mainstream industrial production. The material's appeal lies in its potential for high-performance applications where conventional semiconductors (Si, GaAs) reach performance limits, though practical manufacturing routes and device integration remain under development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,098.6 | ksi | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 12,773.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3764 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4000 | eV | — | ||
| ↳ | 1.052 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1822 | eV/atom | — |