SbInO2S

semiconductor

· SbInO2S

SbInO2S is a quaternary semiconductor compound combining antimony, indium, oxygen, and sulfur—a mixed-valence oxysulfide material that bridges oxide and chalcogenide semiconductor families. This is a research-phase compound under investigation for optoelectronic and photocatalytic applications, where the dual anion system (oxygen and sulfur) can enable tunable band gaps and enhanced light absorption compared to conventional binary or ternary semiconductors. Its potential lies in photovoltaic devices, water splitting catalysts, and visible-light-driven photocatalysis, though it remains primarily in academic development rather than established industrial production.

photovoltaic researchphotocatalytic water treatmentvisible-light photocatalyststhin-film semiconductorsoptoelectronic devices (research phase)environmental remediation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	0.000161	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SbInO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control