SbGaO₃ is an antimony-gallium oxide semiconductor compound belonging to the family of wide-bandgap oxides. This material is primarily investigated in research contexts for next-generation optoelectronic and power electronic devices, where its wide bandgap and potential for high-temperature operation offer advantages over conventional semiconductors like silicon and gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.364 | eV | — | ||
| ↳ | 2.500 | eV | — | ||
Magnetic Moment(μB) | 0.000837 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.712 | eV/atom | — | ||
| ↳ | 0.3400 | eV/atom | — |