SbGaN3 is an experimental ternary nitride ceramic compound combining antimony (Sb), gallium (Ga), and nitrogen (N), belonging to the wider family of III-V and mixed-metal nitrides. This material is primarily of research interest for wide-bandgap semiconductor and high-temperature ceramic applications, rather than a mature commercial product. The antimony-gallium nitride system is being explored for potential use in optoelectronics, high-power electronics, and thermal management where conventional GaN or AlGaN may have limitations, though practical deployment remains limited to specialized research environments.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 2.995 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.720 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data