SbAsOFN

semiconductor

· SbAsOFN

SbAsOFN is an experimental semiconductor compound combining antimony, arsenic, oxygen, and fluorine—a quaternary material system under investigation for optoelectronic and photonic applications. This material family occupies a niche research area focused on tuning bandgap and carrier properties beyond conventional III-V semiconductors, with potential relevance to narrow-bandgap devices, infrared detectors, or integrated photonic systems where compositional flexibility offers advantages over binary or ternary alternatives.

infrared photodetectorsresearch optoelectronicsbandgap engineeringphotonic integrated circuitsnarrow-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	-6.505e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SbAsOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control