SbAs is a binary III-V semiconductor compound combining antimony and arsenic, belonging to the family of arsenide and antimonide semiconductors used in optoelectronic and high-speed electronic devices. This material is primarily investigated in research contexts for infrared detectors, mid-wave infrared (MWIR) imaging systems, and high-mobility electronic applications where the bandgap and carrier transport properties of III-V compounds offer advantages over silicon. Engineers consider SbAs-based structures when designing specialized detectors and integrated circuits that require operation in specific wavelength windows or at elevated temperatures where conventional semiconductors become impractical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,713.8 | ksi | — | ||
Shear Modulus(G) | -158.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.02030 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.600 | eV | — | ||
| ↳ | 1.159 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 2.043 | eV/atom | — | ||
Formation Energy(ΔHf) | 2.019 | eV/atom | — |