SbAs is a binary III-V semiconductor compound combining antimony and arsenic, belonging to the family of arsenide and antimonide semiconductors used in optoelectronic and high-speed electronic devices. This material is primarily investigated in research contexts for infrared detectors, mid-wave infrared (MWIR) imaging systems, and high-mobility electronic applications where the bandgap and carrier transport properties of III-V compounds offer advantages over silicon. Engineers consider SbAs-based structures when designing specialized detectors and integrated circuits that require operation in specific wavelength windows or at elevated temperatures where conventional semiconductors become impractical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,713.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | -158.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.02030 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.600 | eV | Measured | ||
| ↳ | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 2.043 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 2.019 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data