SbAlN3

metal

· SbAlN3

SbAlN₃ is a ternary nitride compound combining antimony, aluminum, and nitrogen, representing an experimental material within the wider family of metal nitrides and wide-bandgap semiconductors. This composition sits at the intersection of III-V nitride research and antimony-based semiconductors, with potential applications in optoelectronic and high-temperature device development. The material remains largely in the research phase, explored for its electronic and thermal properties in specialized semiconductor applications where conventional AlN or GaN may have limitations.

wide-bandgap semiconductorsoptoelectronic research deviceshigh-temperature electronicsIII-V nitride compoundsadvanced semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.334	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.540	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SbAlN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control