Sb2TeSe2 is a layered chalcogenide ceramic compound combining antimony, tellurium, and selenium—a member of the group V-VI semiconductor/thermoelectric material family. This material is primarily investigated in research contexts for thermoelectric energy conversion and topological electronic applications, where its layered crystal structure and moderate mechanical properties make it attractive for temperature-sensitive power generation and potentially novel quantum transport phenomena. Engineers consider chalcogenide compounds like this when seeking materials that combine thermal insulation with electrical conductivity, or when exploring emerging technologies in waste heat recovery and quantum device platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,311.3 | ksi | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 72.59 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,366.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2145 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4000 | eV | DFT · OptB88vdW | ||
Dielectric Constant (Relative Permittivity)(εr) | 155.5 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 34.77 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.2267 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.2233 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.2892 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.8495 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00295 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00512 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -185.6 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 237.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2365 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data