Sb₂Te₃ is a binary chalcogenide semiconductor compound belonging to the V-VI family of materials, commonly used as the active material in thermoelectric devices and phase-change memory applications. It is industrially established in thermoelectric cooling modules and thermal energy harvesting systems, where its moderate band gap and phonon scattering characteristics make it competitive for temperature control and waste heat recovery in electronics and automotive systems. The material has also gained research attention as a topological insulator and for potential layered device architectures, positioning it at the intersection of conventional thermoelectrics and emerging quantum materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 78.13 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 3.008 | BTU/(hr·ft·°F) | — | ||
| ↳ | 3.008 | BTU/(hr·ft·°F) | 27°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2241 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.1900 | eV | — | ||
| ↳ | 0.04500 | eV | — | ||
Electrical Conductivity(σ) | 8,196.7 | S/cm | 27°C | ||
Electrical Resistivity(ρe) | 0.00000122 | Ω·m | 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Thermoelectric Power Factor(PF) | 0.00325 | W/(m·K²) | 27°C | ||
Seebeck Coefficient(S)2 entries | 63.00 | μV/K | 27°C | ||
| ↳ | -189.3 | µV/K | — | ||
Thermoelectric Figure of Merit(zT) | 0.1875 | - | 27°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.1171 | eV/atom | — | ||
| ↳ | -0.1309 | eV/atom | — |