Antimony trisulfide (Sb₂S₃) is a layered semiconductor compound belonging to the V–VI binary chalcogenide family, with a quasi-2D crystal structure that makes it amenable to exfoliation and thin-film device fabrication. It is primarily investigated for photovoltaic applications—particularly as a light-absorber layer in next-generation thin-film solar cells—and emerging optoelectronic devices including photodetectors and thermoelectric modules, where its direct bandgap and favorable absorption coefficients offer advantages over conventional silicon in niche high-efficiency or specialized spectral-response applications. While not yet as mature as conventional photovoltaic materials, Sb₂S₃ represents a cost-effective, lead-free alternative in perovskite-inspired solar research and is gaining attention in the materials science community for its potential in flexible and tandem solar cell architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 16.31 | GPa | DFT | ||
| ↳ | 32.16 | GPa | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 138.3 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2800 | - | DFT · OptB88vdW | ||
Shear Modulus(G)2 entries | 8.940 | GPa | DFT | ||
| ↳ | 17.87 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.515 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.700 | eV | Measured | ||
| ↳ | 1.318 | eV | DFT · OptB88vdW | ||
| ↳ | 1.887 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 108.1 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 14.72 | - | DFT · OptB88vdW | ||
| ↳ | 10.45 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 1.413 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.440 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00230 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00133 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -222.5 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 301.4 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 25.45 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.3379 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.4249 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data