Sb₁Te₁O₃ is an antimony tellurium oxide semiconductor compound, representing a mixed-valence oxychalcogenide material with potential thermoelectric and photovoltaic properties. This is primarily a research-phase material rather than an established commercial product, belonging to a family of compounds being investigated for next-generation energy conversion and optoelectronic applications. The combination of antimony and tellurium oxides offers tunable band gap and carrier transport characteristics that could enable efficient thermal-to-electric conversion or photocatalytic processes where conventional semiconductors are less effective.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 124.4 | GPa | — | ||
Shear Modulus(G) | 43.54 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01190 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5750 | eV/atom | — |