S8Zn2In4 is a ternary semiconductor compound combining sulfur, zinc, and indium elements, belonging to the family of III-VI semiconductors with potential applications in optoelectronic and photovoltaic devices. This material is primarily of research interest rather than widely commercialized, being investigated for its electronic band structure and light-absorption properties as an alternative to more conventional semiconductors like CdTe or CIGS in thin-film solar cells and photodetectors. Its zinc and indium content positions it as a candidate material for exploring cost-performance trade-offs in next-generation semiconductor applications where tunable bandgap and thermal stability are desirable.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 70.83 | GPa | — | ||
Shear Modulus(G) | 31.34 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.153 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6920 | eV/atom | — |