S8 V4 Ge1

semiconductor

· S8 V4 Ge1

S8V4Ge1 is an experimental IV-VI semiconductor compound combining sulfur, vanadium, and germanium elements, designed for narrow-bandgap or mid-infrared photonic applications. This research-phase material belongs to the family of chalcogenide semiconductors and is being investigated primarily in academic and advanced materials laboratories for potential use in infrared sensing, thermal imaging, or optoelectronic devices where conventional semiconductors prove inadequate. The vanadium doping strategy distinguishes it from binary S-Ge systems and suggests exploration of band-structure engineering for specific spectral windows.

infrared photodetectors (research stage)thermal imaging sensorsmid-IR optoelectronicsbandgap engineering studiesmaterials research & developmentspecialized photonic applications (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.09930	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9460	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

S8 V4 Ge1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control