S8V4Ga1 is an experimental semiconductor compound belonging to the sulfide-based semiconductor family, likely a vanadium-gallium sulfide system designed for niche optoelectronic or photovoltaic applications. This material represents early-stage research rather than a commercial product, with composition optimized to explore specific electronic or optical properties within the chalcogenide semiconductor space. Engineers would evaluate this material primarily in academic or pilot-scale research contexts exploring alternative semiconductor systems beyond conventional silicon or III-V compounds.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,018.8 | ksi | — | ||
Shear Modulus(G) | 6,924.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8079 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.025 | eV/atom | — |