S8Mo6Yb1 is an experimental semiconductor compound combining sulfur, molybdenum, and ytterbium in a layered or mixed chalcogenide structure. This research-phase material belongs to the family of transition-metal chalcogenides, which are studied for optoelectronic and energy-conversion applications where tunable band gaps and strong light-matter interactions are valuable. The ytterbium doping introduces rare-earth functionality, potentially enhancing photoluminescence, thermal properties, or carrier mobility compared to undoped Mo–S systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.108 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9950 | eV/atom | — |