S8Mn2In4 is a ternary semiconductor compound combining sulfur, manganese, and indium elements, likely synthesized for research into novel optoelectronic or thermoelectric materials. This compound belongs to the broader family of chalcogenide semiconductors with transition metal dopants, which are investigated for tunable band gaps, magnetic properties, and potential applications in quantum devices or energy conversion systems. As an emerging research material, S8Mn2In4 would be of interest to materials scientists exploring alternative semiconductor chemistries beyond traditional silicon or III-V compounds, though industrial adoption and processing routes remain under development.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 56.33 | GPa | — | ||
Shear Modulus(G) | 27.32 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02710 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6260 | eV/atom | — |