S8Ga1Mo4 is an experimental semiconductor compound belonging to the chalcogenide family, combining sulfur with gallium and molybdenum elements. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its electronic bandgap and optical properties may offer advantages in light absorption or emission compared to conventional semiconductors. The specific composition suggests potential use in thin-film solar cells, photodetectors, or other next-generation electronic devices, though it remains largely in the laboratory development stage rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,957.4 | ksi | — | ||
Shear Modulus(G) | 6,103.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.238 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8800 | eV/atom | — |