S6 Rb6 In2 is an experimental ternary semiconductor compound composed of sulfur, rubidium, and indium. While not yet established in commercial production, this material belongs to the family of chalcogenide semiconductors—a research-active class explored for optoelectronic and solid-state energy conversion applications. Its potential utility lies in next-generation photovoltaic devices, thermoelectric materials, or other emerging semiconductor technologies where unconventional elemental combinations offer band structure or transport properties not achievable with conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,153.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,370.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.296 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.179 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data