S6 Ga4 is a gallium-based semiconductor compound, likely a III-V semiconductor material in the gallium arsenide or gallium nitride family. This material is primarily investigated in research and advanced device applications where direct bandgap properties and high electron mobility are advantageous for optoelectronic and high-frequency electronic performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,738.7 | ksi | — | ||
Shear Modulus(G) | 3,834.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.677 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7300 | eV/atom | — |