S6 Ga2 In2

semiconductor

· S6 Ga2 In2

S6 Ga2 In2 is a ternary III-V semiconductor compound combining sulfur with gallium and indium, representing a mixed-anion or mixed-cation variant within the gallium indium sulfide material family. This compound is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where the bandgap and lattice properties can be engineered through composition tuning to target specific wavelengths or device architectures that conventional binary compounds (like GaAs or InP) cannot easily address.

photovoltaic solar cellsinfrared optoelectronicsthin-film absorbersbandgap engineeringexperimental semiconductor researchlight-emitting device development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.548	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6780	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

S6 Ga2 In2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control