S₄Mn₂Sn₁ is a ternary intermetallic semiconductor compound combining sulfur, manganese, and tin. This is a research-phase material within the family of transition-metal chalcogenides, primarily of interest for its electronic and thermal properties rather than structural applications. It represents an emerging class of compounds being investigated for thermoelectric conversion, optoelectronic devices, and solid-state energy applications where the tunable band structure and mixed-valence chemistry of manganese-tin-sulfur systems offer potential advantages over binary or simpler ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,276.1 | ksi | — | ||
Shear Modulus(G) | 4,026.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4780 | eV/atom | — |