S4 Ge2 is a germanium-based semiconductor compound with a stoichiometric sulfur-to-germanium ratio, belonging to the IV-VI or related chalcogenide semiconductor family. This material is primarily of research and developmental interest for optoelectronic and thermoelectric applications, where germanium compounds are explored as alternatives or complements to more conventional semiconductors like silicon and III-V materials. The specific composition suggests potential utility in infrared sensing, thermal management, or next-generation photovoltaic research where germanium's favorable band gap and carrier properties can be leveraged in novel compound structures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,093.3 | ksi | — | ||
Shear Modulus(G) | 2,911.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.218 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3590 | eV/atom | — |