S4Ga4Te2 is a quaternary semiconductor compound combining sulfur, gallium, and tellurium elements, belonging to the family of chalcogenide semiconductors. This is primarily a research material under investigation for optoelectronic and photonic applications, where its direct bandgap and crystal structure show promise for light emission and detection in the infrared spectrum. The material is notable within the broader context of wide-bandgap and narrow-bandgap semiconductor research as a potential alternative to conventional binary or ternary semiconductors for specialized sensing, imaging, or photovoltaic systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.18 | GPa | — | ||
Shear Modulus(G) | 20.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.072 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6010 | eV/atom | — |