S₄Ga₂Cd₁ is an experimental II-VI compound semiconductor combining sulfur, gallium, and cadmium in a mixed-metal sulfide structure. This material belongs to the family of ternary sulfide semiconductors, which are primarily investigated in research contexts for optoelectronic and photovoltaic applications where tailored bandgaps and carrier properties are needed. The combination of gallium and cadmium with sulfur offers potential for tuning electronic properties relative to binary alternatives like CdS or Ga₂S₃, though it remains largely in development with limited industrial deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.37 | GPa | — | ||
Shear Modulus(G) | 24.74 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.113 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7460 | eV/atom | — |