S4Ba2Hf1 is an experimental hafnium-barium sulfide compound belonging to the sulfide semiconductor family, likely being investigated in materials research laboratories rather than established in widespread industrial production. This material represents the broader class of transition metal sulfides, which are explored for optoelectronic and photocatalytic applications due to their tunable bandgaps and layered crystal structures. As a hafnium-containing compound, it may offer thermal stability advantages relevant to high-temperature semiconductor devices, though its niche composition suggests it remains in the research or prototype phase rather than production-scale manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,045.6 | ksi | — | ||
Shear Modulus(G) | 4,928.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9122 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.104 | eV/atom | — |