S₃As₁Tl₃ is a ternary semiconductor compound combining sulfur, arsenic, and thallium elements. This is a research-phase material studied for its semiconducting properties within the sulfide-arsenide-halide compound family, rather than an established commercial semiconductor. Interest in this composition centers on potential applications in infrared optics and specialized solid-state electronics where the combined constituent elements may offer unique band gap characteristics or optical response properties unavailable in binary or more conventional ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,292.4 | ksi | — | ||
Shear Modulus(G) | 1,186.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.081 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3740 | eV/atom | — |