S2 In1 Tl1

semiconductor

· S2 In1 Tl1

S₂In₁Tl₁ is a ternary III-V semiconductor compound combining sulfur, indium, and thallium. This is a research-stage material intended for optoelectronic and photovoltaic applications, where the mixed-cation composition offers potential band gap engineering and lattice parameter tuning unavailable in binary semiconductors.

experimental photovoltaic devicesinfrared detectorsband gap engineeringternary semiconductor researchoptoelectronic materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	7,406.6	ksi	—
Shear Modulus(G)	3,585.3	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7340	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

S2 In1 Tl1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control