S2 Ag1 In1 is a ternary semiconductor compound combining sulfur, silver, and indium in a 2:1:1 stoichiometric ratio. This material belongs to the I-III-VI semiconductor family and is primarily of research interest for optoelectronic and photovoltaic applications due to the bandgap engineering possibilities offered by silver and indium doping. While not yet widely commercialized, compounds in this family show promise for thin-film solar cells, photodetectors, and specialized light-emission devices where the combination of metal dopants can tune electronic properties beyond binary sulfide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 72.96 | GPa | — | ||
Shear Modulus(G) | 16.29 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.09390 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4230 | eV/atom | — |