S16 K8 Ga8 is a ternary semiconductor compound combining sulfur, potassium, and gallium in a 16:8:8 stoichiometric ratio. This is a research-phase material within the broader family of III–VI semiconductors; such compounds are being explored for optoelectronic and photovoltaic applications where tunable bandgap and solution-processability offer advantages over conventional silicon or GaAs. The potassium doping and specific composition suggest investigation into charge transport, defect engineering, or layer-based device structures in emerging thin-film technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.642 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.161 | eV/atom | — |