S12In4Sb4 is a quaternary semiconductor compound belonging to the III-V semiconductor family, combining sulfur, indium, and antimony in a layered or mixed crystal structure. This material is primarily investigated in research contexts for optoelectronic and thermoelectric applications, where its bandgap and carrier transport properties may offer advantages in specific temperature ranges or wavelength regimes compared to binary or ternary alternatives like InSb or In2S3.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.339 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4860 | eV/atom | — |