S10 Ti2 Ba6

semiconductor

· S10 Ti2 Ba6

S10 Ti2 Ba6 is a titanium-barium intermetallic compound or complex oxide semiconductor, likely a research or specialty material designed for electronic or photonic applications. This composition suggests a ternary or quaternary system combining titanium and barium with sulfur or another chalcogen, potentially engineered for specific band gap, carrier mobility, or optical properties distinct from simple binary semiconductors.

photovoltaic researchoptoelectronic devicesthin-film semiconductorsmaterials research and developmentwide band gap applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.380	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.066	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

S10 Ti2 Ba6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control