S10 Rb8 In4 is an experimental ternary semiconductor compound combining rubidium, indium, and sulfur in a specific stoichiometric ratio. This material belongs to the family of alkali-metal-containing III-V semiconductors and is primarily of research interest for exploring novel electronic and optoelectronic properties, rather than established industrial production. Materials in this compositional family are investigated for potential applications in solid-state electronics and photonic devices where unusual band structures or transport properties might offer advantages over conventional semiconductors, though commercial adoption remains limited pending further development and characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,126.4 | ksi | — | ||
Shear Modulus(G) | 1,405.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.039 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.135 | eV/atom | — |