RuSe₂ is a transition metal dichalcogenide semiconductor compound combining ruthenium and selenium, part of an emerging class of materials being investigated for next-generation electronic and optoelectronic devices. This material remains primarily in the research phase, with potential applications in high-performance semiconductors, photocatalysis, and energy conversion systems where its layered crystal structure and tunable bandgap could offer advantages over conventional silicon-based or established chalcogenide alternatives. Engineers considering RuSe₂ are typically exploring it for specialized applications requiring chemical stability, semiconducting properties, or catalytic activity rather than as a drop-in replacement for mature semiconductor technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 140.1 | GPa | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 95.72 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.905 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.000 | eV | — | ||
| ↳ | 0.2650 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 25.71 | - | — | ||
| ↳ | 22.35 range 19.20–25.51median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -88.72 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4237 | eV/atom | — |