RuSe₂ is a transition metal dichalcogenide semiconductor compound combining ruthenium and selenium, part of an emerging class of materials being investigated for next-generation electronic and optoelectronic devices. This material remains primarily in the research phase, with potential applications in high-performance semiconductors, photocatalysis, and energy conversion systems where its layered crystal structure and tunable bandgap could offer advantages over conventional silicon-based or established chalcogenide alternatives. Engineers considering RuSe₂ are typically exploring it for specialized applications requiring chemical stability, semiconducting properties, or catalytic activity rather than as a drop-in replacement for mature semiconductor technologies.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 140.1 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2300 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 95.72 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.905 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.2650 | eV | DFT · OptB88vdW | ||
| ↳ | 0.6430 | eV | DFT · TBmBJ | ||
| ↳ | 1.000 | eV | Measured | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 25.71 | - | DFT · PBE | ||
| ↳ | 22.35 range 19.20–25.51median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 19.84 | - | DFT · OptB88vdW | ||
| ↳ | 19.83 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.01000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.01000 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000528 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00112 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -88.72 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 339.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 21.27 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4237 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data