RuS2
semiconductorRuthenium disulfide (RuS₂) is a transition metal dichalcogenide semiconductor with a pyrite crystal structure, belonging to the family of layered and three-dimensional metal sulfides used in emerging electronic and energy applications. While primarily a research material rather than a production-scale commodity, RuS₂ is investigated for photocatalysis, electrocatalysis (particularly hydrogen evolution and oxygen reduction), and next-generation thermoelectric devices due to its favorable electronic band structure and chemical stability. Engineers consider RuS₂ when designing catalytic systems that require high activity and durability, or when exploring beyond-silicon semiconductors for niche optoelectronic or energy conversion roles where conventional materials reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24,762.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.2100 | - | — | ||
Shear Modulus(G) | 18,199.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2179 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.800 | eV | — | ||
| ↳ | 0.5970 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 20.69 | - | — | ||
| ↳ | 18.75 range 16.56–20.95median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -98.70 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.7113 | eV/atom | — | ||
| ↳ | -0.6457 | eV/atom | — |