RuBaO3 is a mixed-metal oxide semiconductor containing ruthenium and barium, representing a perovskite or perovskite-related structure. This is primarily a research compound of interest in materials science and solid-state physics, not yet established in high-volume production. The material is investigated for potential applications in electrochemistry, catalysis, and electronic devices where the unique properties of ruthenium-containing oxides—such as mixed-valence behavior and redox activity—may offer advantages over simpler oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.7470 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.4000 | μB | — | ||
| ↳ | -3.676 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.763 | eV/atom | — | ||
| ↳ | 2.480 | eV/atom | — |