Ru₄Se₈ is a layered transition metal chalcogenide semiconductor composed of ruthenium and selenium, representing an emerging class of materials in the broader family of TMD (transition metal dichalcogenide) analogs. This compound is primarily of research interest for its potential in optoelectronic and quantum device applications, where its layered crystal structure and electronic properties could enable novel functionality in photovoltaics, photodetectors, and two-dimensional electronics, though industrial adoption remains limited pending optimization of synthesis routes and performance validation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 140.1 | GPa | — | ||
Shear Modulus(G) | 95.72 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2116 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4240 | eV/atom | — |