Ru2 is a semiconductor material based on ruthenium compounds, likely belonging to the family of transition metal semiconductors or intermetallic compounds. While specific compositional details are not provided, ruthenium-based semiconductors are of significant research interest for their unique electronic properties and potential in advanced device applications. This material represents an emerging class of semiconductors with potential advantages in specialized electronic and optoelectronic applications where conventional silicon or III-V semiconductors may be limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 45,535.5 | ksi | — | ||
Shear Modulus(G) | 27,930.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.000 | eV/atom | — |