Ru₂N₄ is an experimental transition metal nitride semiconductor compound containing ruthenium and nitrogen. This material belongs to the family of early transition metal nitrides, which are being investigated for next-generation electronic and photocatalytic applications due to their combination of metallic and semiconductor properties. As a research-phase material, Ru₂N₄ shows promise in catalysis and energy conversion where the strong metal-nitrogen bonding and electronic structure could enable efficient charge transport and surface reactivity beyond conventional nitride semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43,688.6 | ksi | — | ||
Shear Modulus(G) | 27,367.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00520 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2210 | eV/atom | — |