Ru1 is a ruthenium-based semiconductor material, likely a pure or near-pure ruthenium compound engineered for electronic applications. Ruthenium semiconductors are investigated primarily in research contexts for their potential in high-temperature electronics, catalytic devices, and advanced integrated circuits where conventional silicon-based semiconductors reach performance limits. This material is notable for its combination of metallic conductivity characteristics with semiconductor-tunable properties, making it of interest for specialized applications requiring robust performance in extreme thermal or chemical environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 308.2 | GPa | — | ||
Shear Modulus(G) | 194.8 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00100 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1110 | eV/atom | — |