Ru1Sb1Ta1 is an intermetallic compound combining ruthenium, antimony, and tantalum—a research-phase semiconductor material from the transition metal family. This composition remains largely experimental, with potential applications in high-temperature electronics and thermoelectric devices where the combined properties of these refractory metals could enable operation in extreme environments. Engineers would consider this material for niche applications requiring thermal stability and electrical control simultaneously, though availability and processing routes remain limited compared to established semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25,753.9 | ksi | — | ||
Shear Modulus(G) | 9,717.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8752 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3270 | eV/atom | — |