RhGaO2N is an experimental oxynitride ceramic compound containing rhodium, gallium, oxygen, and nitrogen elements. This material belongs to the family of complex metal oxynitrides, which are primarily investigated in research settings for their potential to combine properties of both oxides and nitrides—such as enhanced electronic conductivity, photocatalytic activity, or thermal stability. While not yet established in mainstream industrial production, oxynitride ceramics like RhGaO2N are being explored for next-generation applications in catalysis, photocatalysis, and advanced functional ceramics where conventional oxides or nitrides fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.07961 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.220 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data