RhGaN3 — Properties & Data | MatWorld

RhGaN3

ceramic

· RhGaN3

RhGaN₃ is an experimental rhodium-gallium nitride ceramic compound, representing a rare-earth-doped or transition-metal-modified GaN material system. This compound belongs to the wide-bandgap semiconductor ceramic family and is primarily of research interest for advanced optoelectronic and high-temperature applications where GaN's thermal stability and wide bandgap are enhanced by rhodium incorporation.

high-temperature electronics researchwide-bandgap semiconductorsoptoelectronic devicesadvanced ceramic coatingsthermal barrier materialsemerging device prototyping

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.7769	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.180	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

RhGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental