Rh₂N₄ is an experimental transition metal nitride semiconductor compound combining rhodium and nitrogen in a high nitrogen-to-metal ratio. This material belongs to the family of metal nitrides being investigated for wide bandgap semiconductor applications, with potential advantages in high-temperature and high-power device operation. As a research-phase material, Rh₂N₄ represents the broader exploration of transition metal nitrides as alternatives to conventional semiconductors, though its specific device performance and manufacturability remain under development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 244.3 | GPa | — | ||
Shear Modulus(G) | 146.6 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00750 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2270 | eV/atom | — |