Rh1O2F6 is an experimental rhodium oxide fluoride compound classified as a semiconductor, representing a mixed-anion ceramic material combining transition metal oxides with fluorine dopants. This class of materials is primarily investigated in research contexts for advanced electronic and photocatalytic applications, where the fluorine incorporation can modify electronic band structure and chemical reactivity compared to conventional oxide semiconductors. The material family shows potential in photocatalysis, electrochemistry, and specialized electronic devices where the unique properties from rhodium's d-electron behavior and fluorine's high electronegativity could enable enhanced performance.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | -567.0 | MPa | — | ||
Shear Modulus(G) | 1.640 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02630 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.060 | eV/atom | — |