Rh1N1 is a rhodium nitride semiconductor compound representing an emerging class of transition metal nitrides with potential for advanced electronic and optoelectronic applications. This material is primarily of research interest rather than established in high-volume manufacturing, studied for its semiconducting properties within the broader family of refractory metal nitrides. Researchers explore such compounds for next-generation applications requiring materials that combine the hardness and thermal stability of ceramic nitrides with tunable electronic properties, positioning them as alternatives to conventional semiconductors in specialized high-temperature or high-energy environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32,875.3 | ksi | — | ||
Shear Modulus(G) | 4,470.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00410 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7950 | eV/atom | — |