ReGaO3 is an experimental rare-earth gallium oxide ceramic compound combining rare-earth elements with gallium oxide in a perovskite or related crystal structure. Research into ReGaO3 compositions targets wide-bandgap semiconductor and optoelectronic applications where thermal stability, high-temperature performance, and electrical properties are critical, positioning it as an emerging alternative to conventional oxides like Al2O3 and more established wide-bandgap semiconductors for next-generation power electronics and UV photonics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · PBE | ||
Magnetic Moment(μB)2 entries | 0.7990 | μB | DFT | ||
| ↳ | 2.688 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.3640 | eV/atom | DFT | ||
| ↳ | 1.100 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data