RbWO2N

semiconductor

· RbWO2N

RbWO2N is an experimental ternary nitride semiconductor composed of rubidium, tungsten, and nitrogen. This material belongs to the oxynitride family and represents a research-phase compound being investigated for photocatalytic and electronic applications where tunable bandgap and mixed anion chemistry offer advantages over conventional oxides or nitrides alone. Potential industrial interest centers on environmental remediation (water treatment, air purification via photocatalysis) and next-generation optoelectronic devices, though the material remains primarily in academic development and is not yet used in commercial production.

photocatalytic water treatmentvisible-light photocatalysissemiconductor researchoxynitride electronicsenvironmental remediation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	0.000512	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

RbWO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control