RbUO3
semiconductorRbUO₃ is a uranium oxide compound with rubidium doping, classified as a semiconductor material within the family of actinide oxides. This is a research-phase compound primarily investigated for its electronic and structural properties rather than established commercial production. The material represents experimental work in nuclear materials science and solid-state physics, where uranium oxide semiconductors are studied for potential applications in radiation detection, nuclear fuel cycles, and advanced ceramic materials; however, practical industrial adoption remains limited and the compound serves primarily as a model system for understanding how alkali metal dopants modify the electronic behavior of uranium oxide ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,063.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 11,037.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2706 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.986 | eV | — | ||
| ↳ | 0.5280 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 18.56 | - | — | ||
Magnetic Moment(μB)2 entries | 0.2000 | μB | — | ||
| ↳ | 1.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -3.114 | eV/atom | — | ||
| ↳ | -3.146 | eV/atom | — |