RbTiO2F is a mixed halide-oxide perovskite semiconductor combining rubidium, titanium, oxygen, and fluorine. This is a research-phase material studied primarily in photovoltaic and optoelectronic contexts as part of the broader family of halide perovskites, which have shown promise for next-generation solar cells and light-emitting devices due to their tunable bandgaps and solution-processability. The fluorine substitution and rubidium incorporation are being investigated to improve stability, reduce toxicity compared to lead-based variants, and optimize electronic properties for thin-film device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.100 | eV | — | ||
Magnetic Moment(μB) | 1.573e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1600 | eV/atom | — |