RbTaO2S

semiconductor

· RbTaO2S

RbTaO₂S is an experimental ternary oxide-sulfide semiconductor compound composed of rubidium, tantalum, oxygen, and sulfur. This material belongs to the family of mixed-anion semiconductors and is primarily investigated in academic and research settings for photocatalytic and optoelectronic applications. Its mixed oxide-sulfide composition offers potential advantages over conventional semiconductors in light-driven chemical processes, though it remains largely in the development phase without widespread commercial deployment.

photocatalytic water splittingvisible-light photocatalysishydrogen generationresearch semiconductorssolar energy conversionenvironmental remediation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—
Magnetic Moment(μB)	0.0000173	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

RbTaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control